|
|
 |
| |
|
|
|
Computer Simulation of Exciton Capture Mechanism in GaN/AlGaN Quantum Heterostructures |
|
|
|
PP: 165-169 |
|
|
|
Author(s) |
|
|
|
Jyoti Patil,
Sharmila Chaudhari,
|
|
|
|
Abstract |
|
|
| Research of the optical properties of III- nitrides quantum well is use to improve the efficiency of optical properties of for
light-emitting diodes (LEDs) and laser diodes (LDs) . Also III- nitride semiconductors are used in applications like water sterilization,
skin treatment and security.Two dimension multiple quantum well (MQW) & Modified Symmectric Quantum Well (MSQW) carrier
confinement are neccessary to increase the efficiency of AlGaN/lGaN .Therefore AlGaN-based materials are suitable for development of
ultraviolet light source.Study of optical properties of the specific structure of AlGaN/GaN has been done in this research. Examination
of carrier confinement mechanism and the carrier life time by exciting the material in quantum barrier energy under continuous wave
operation in the visible spectrum region ranging from green to blue colors is reported in this research. [1] The theoretical analysis for
energy band gap, Refractive indices, Dielectric function and model parameters has been carried out and results of simulation along with
temperature drift of various parameters are presented. The paper concludes with the possible application of these results in the design
of GaN waveguides, which are to be used at the elevated temperatures and for GaN/AlGaN hetero-structure lasers. [2]. |
|
|
|
|
|
|
|
