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Characteristics of Sb2S3 Thin Films Deposited by a Chemical Method |
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PP: 237-242 |
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Author(s) |
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P. A. Chate,
S. D. Lakde,
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Abstract |
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| In the present paper, we have reported the room temperature growth of antimony sulphide (Sb2S3) thin films by dip method and detailed characterization of these films. The films were deposited from a reaction bath containing antimony chloride, glycine and sodium thiosulphate. We have analyzed the structure, morphology, composition, optical and electrical properties of Sb2S3 thin films. X-ray diffraction pattern showed that the films were polycrystalline. From optical absorption spectra the band gap of the material is estimated to be 2.27 eV. The electrical conductivity is of the order of 10-7 (Ω cm)-1. Composition analyses by EDAX show that the films are nearly stiochiometric in composition. |
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