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Growth and Characterization of GaAsxP1-xNanowires |
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PP: 227-229 |
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Author(s) |
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VedamRamaMurthy,
Alla Srivani,
G Krishna Kumari,
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Abstract |
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| The optical properties of bulk as well as nano GaAsxP1-xNano wiresdeveloped by the Chemical Bath Deposition (CBD) were investigated in this paper. Results of optical Transmission, absorption, reflection spectra, optical conductance, refractive index, extension coefficient, real and imaginary dielectric constants studies are reported. The optical properties were obtained using UV-VIS Double Beam Spectrophotometer Version 6.51 in the wavelength range 200-1100 nm. The optical transmittance of the film of nano GaAsxP1-xNano wiresformed at 500C was 99% at wavelength ≈ 475nm then decreases to 90% at wavelength ≈482nm for thin film of nano GaAsxP1-xNano wiresat room temperature and 75% transmittance at wavelength ≈490nm for thin film of bulk GaAsxP1-xNano wires. The band-gap was also calculated from the equation relating absorption co -efficient with the wavelength. The energy band gap changes from 2.5eV (Bulk GaAsxP1-xNano wires) to 3.6eV (nano GaAsxP1-xNano wiresat 500C). The plotted graphs show the optical characteristics of the film which varied with the wavelength and the photon energy. The optical conductance and band-gap indicated that the film is transmitting within the visible range. The dielectric constant and optical conductance of the film initially increases slowly then abruptly and finally becomes constant with increase in photon energy. The extinction coefficient and refractive index of the films also evaluated, which affected with the change in transmittance. The dielectric constant changes with change in photon energy. |
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