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Study on Influence Factors of Silicon Nitride Nano-cutting Process by Molecular Dynamics |
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PP: 807-812 |
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Author(s) |
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Ke Zhang,
Haiyan Gao,
Guozhi Liu,
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Abstract |
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| Si3N4 ceramics becomes a new promising material due to its excellent physical and chemical properties. However, it is difficult to process and has high processing costs, which limits the further application of Si3N4 ceramics. In this paper, the molecular dynamics (MD) is employed to nano-cutting simulation of silicon nitride. The interaction forces between atoms are calculated by Tersoff potential function. The influences of cutting temperature, energy under different cutting rake angle, cutting speed and cutting depth on the cutting process are analyzed from the atoms point of view. The results show that shear effect of tangential force plays a main role on cutting process. Increasing the cutting rake angle appropriately can reduce the cutting temperature. The changes of cutting rake angle have a little effect on the potential function. The simulation results are helpful to improve the processing efficiency and reduce processing costs of the silicon nitride ceramics, which have certain guiding significance on the applications of Si3N4 ceramic materials. |
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