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Annealing Temperature Dependence on Structural, Electrical Optical and Photoluminescence Properties of Nanocrystalline CIO Thin Films |
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PP: 133-139 |
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Author(s) |
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P. Deepa,
V. Sivaranjani,
P. Philominathan,
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Abstract |
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| In this work, we have reported the effect of annealing temperature on structural, optical, electrical, and photoluminescence properties of the nanocrystalline copper doped indium oxide thin films prepared by simplified spray pyrolysis technique using perfume atomizer. XRD reveals that the films are polycrystalline with cubic structure. Photoluminescence was also measured at room temperature and the spectrum confirms the deep-level as well as near band edge emission. From the optical measurements, optical constant of this films calculated by a recently introduced method of calculations, PUMA. The absorption coefficient, refractive index and extinction coefficient are obtained for prepared films. The negative sign of hall co-efficient confirmed n-type conductivity. Films with high mobility of 14.5 cm2/(Vs), carrier concentration of 1.9 ×1020 cm-3, resistivity of 2.27×10-4 Ωcm were obtained when annealed at 400 K..
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