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P-Channel Gd2O3 Trapping Layer for SONOS-Type Flash Memory |
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PP: 141-147 |
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Author(s) |
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Yu-Hsien Lin,
Hsin-Chiang You,
Jhih-Yong Hsu,
Jyun-Han Li,
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Abstract |
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| This paper proposes and demonstrates a p-channel SONOS-type memory based on a high-κ dielectric material gadolinium
oxide (Gd2O3) trapping layer. In the proposed design, we used band-to-band hot electron injection for programming, and channel hot-
hole injection for erasing through a highly efficient charge storage device operation. The proposed design has a total memory window
of 11V, 10-year Vt retention window with approximately 9% charge loss, and sufficient memory window for 104 programming/erasing
cycles of endurance. The proposed p-channel SONOS-type Gd2O3 trapping layer flash memory exhibits large memory windows, high
program/erase speed, excellent endurance, and optimal disturbance characteristics. |
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