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Electrical Properties of Thermal Evaporated Bismuth Telluride Thin Films. |
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PP: 13-16 |
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Author(s) |
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Joy Kumar Das,
M. A. I. Nahid,
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Abstract |
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| Bismuth Telluride films (Bi2Te3) were fabricated using thermal evaporation technique in a vacuum better than 10-5 torr onto glass substrate. The study of electrical properties of Bi2Te3 thin films was carried out in the thickness range of about 50-300 nm and temperature range 300-470K. The electrical conductivity was found to increase with thickness of the films and temperatures. The activation energy was decreased with film thickness while the grain size was increased with the thickness. The temperature co-efficient of resistance (TCR) was obtained negative that indicates nonmetallic behavior. The Hall co-efficient, carrier mobility, carrier concentration, mean free path and mean free time were also studied. These results suggest that the investigated films are semiconducting in nature. |
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