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Study of Iron Silicide Formed by Ion Beam Mixing. |
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PP: 51-55 |
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Author(s) |
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Rachid Ayache,
A. Bouabellou,
F. Eichhorn,
F. Kermiche,
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Abstract |
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| Ion beam mixing has been extensively used in Metal/Silicon systems to produce the new phases. In the present study a Fe films was deposited by thermal evaporation onto p-type Si(111). The films were irradiated with 300 keV Xe+ ions at room temperature (RT) and subsequently annealed. The experimental results have shown that the Xe irradiation at RT leads to the formation only of the ε-FeSi phase, and after thermal annealing the Fe layer is transformed to a mixture of ε-FeSi, α-FeSi2 and β-FeSi2 phases. The β-FeSi2 having a direct band gap of 0.81 eV, is demonstrated. |
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