|
|
 |
| |
|
|
|
Physical Properties of Undoped and Doped ZnO Thin Films Prepared by Spray Pyrolysis for Photovoltaic Application |
|
|
|
PP: 51-56 |
|
|
|
Author(s) |
|
|
|
F.Chouikh,
Yamina Beggah,
Mohammed Salah Aida,
|
|
|
|
Abstract |
|
|
| Al doped ZnO thin films were synthesized by ultrasonic spray pyrolysis technique. The concentration ratio of [Al]/[Zn] was varied from 1 to 5 %mol in the starting solution, in order to investigate the effect of doping ratio on the structural optical and electrical films properties. The films thicknesse was found in the range 900-1100 nm. X-ray diffraction analysis indicates that the films doped with Al using aluminium chloride (AlCl3.H2O) has a textured structure with (002) preferred orientation, .The grain size increases with Al concentration from 28.91 to 59.11 nm. The average optical transmittance of all films, regardless the doping concentration, was higher than 80% in the visible range, the values of optical direct band gap and disorder energy(Urbach energy) were deduced from the absorption spectra . From the electrical measurements carried by two probes technique, we concluded that the electrical conductivity of doped ZnO layers higher than that of undoped layers. |
|
|
|
|
|
|
|
