|
|
 |
| |
|
|
|
Influence of annealing and thickness on the electrical properties of invar36 thin film for strain gauge applications |
|
|
|
PP: 155-161 |
|
|
|
Author(s) |
|
|
|
H. M Kalpana,
V. Siddeswara Prasad,
M. M Nayak,
|
|
|
|
Abstract |
|
|
| Invar36 thin films with various thicknesses from 200 °Ato 1400°Aare deposited on glass substrates by DC magnetron
sputtering technique. After deposition, the samples are annealed in vacuum ambient (10−5mbar) upto 500◦C. Electrical properties of
as-deposited as well as annealed films are analyzed with respect to thickness and annealing temperature. In situ measurement of sheet
resistance of films with respect to annealing temperature is carried out by four probe technique. There is a decrease of sheet resistance
and resistivity of all films with increasing temperature irrespective of film thickness.The resistivity of the as deposited films is around
230 mW-cm and decreases with increasing temperature and found as 84 mW-cm for 550°Afilm annealed at 500◦C. Temperature
co-efficient of resistance (TCR) of films at different temperature is measured and is found to be in the range of 10−4/ ◦C.Gauge factors
of as deposited and annealed at 300◦C and 500◦C films are measured by using four point bending technique and it is found that gauge
factor decreases with respect to annealing temperature irrespective of film thickness. The best characteristics among different
thickness and annealing temperature are obtained at 500◦C, for the films of thicknesses between 400 °Ato 600 °A. |
|
|
|
|
|
|
|
