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Dielectric Properties of Vacuum Evaporated SnS Thin Films |
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PP: 87-98 |
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Author(s) |
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Bushra A. Hasan,
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Abstract |
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| Tin Sulfide SnS thin films with different thicknesses (t=100, 200, and 300nm) were synthesized successfully by thermal evaporation process. The dielectric permittivity ε and ac conductivity σac were measured at temperatures in the range of 293–493 K and frequencies in the range of 10 kHz–100MHz. It is found that there are two conductivity mechanisms and hence two activation energies converts to one mechanism with the increase of t.The ac activation energy EAC decreases with thickness and frequency. The exponent s shows a progressive decrease with t. The results are explained in terms of structural difference by the effect of t and thermal treatment. Few anomalies in dielectric studies were observed near 340 and440K, respectively. These points were related to crystalline phase transitions. |
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