|
|
 |
| |
|
|
|
The Effect of the Growth Condition on the Properties of the New Material Sn3Sb2S6 Thin Films |
|
|
|
PP: 27-34 |
|
|
|
Author(s) |
|
|
|
M. Kanzari,
A. Larbi,
N. Khedmi,
|
|
|
|
Abstract |
|
|
| Sulfosalt Sn3Sb2S6 material was synthesised by the horizontal Bridgman method. X-rays diffraction analysis of the powder
showed that only homogenous Sn3Sb2S6 phase is present in the ingot. Sn3Sb2S6 thin films were deposited by a single source vacuum
thermal evaporation with different thicknesses on glass substrates. The optical and structural properties of the films were studied as
a function of thicknesses and temperature substrates. It is interest to note that Sn3Sb2S6 films exhibit polycrystalline structures along
(416) preferred plane without heating the substrates. In addition, we note that as the thickness increases from 150 nm to 430 nm the
average grain size increases from 190 to 350 °A. The samples have direct bandgap energies of 1.5 - 1.75 eV. Furthermore, we found that
the absorption coefficient in all cases reached 104 cm−1. So, Sulfosalt Sn3Sb2S6 thin films could be used as a potential candidate in
may technological applications such as photovoltaic solar cells |
|
|
|
|
|
|
|
