|
|
 |
| |
|
|
|
Characteristic of I-V , C-V for a-Ge:Sb/c-GaAs Hetrojunction |
|
|
|
PP: 77-83 |
|
|
|
Author(s) |
|
|
|
A.Salah,
M.F.Alias,
A.Kadhum,
H.Kh.Al-Lamy,
|
|
|
|
Abstract |
|
|
| Ge:Sb films with thickness (500nm) have been deposited by thermal evaporation technique on glass substrate and c-GaAs wafer at room temperature, under vacuum of 10-5 mbar with rate of deposition equal to 10Ǻ/sec. These films have been annealed at different annealing temperatures (100, 200)0C. The structural characteristic of the films prepared on glass and GaAs substrates have been studied by using X-ray diffraction, the tests show that all the films have amorphous structure for all annealing temperatures. The C-V measurement of a-Ge:Sb/c-GaAs heterojunciton at frequency 1 KHz and we found built – in potential (Vbi)increase from 0.645 V to 0.84 V with Taincrease from RT to 200 0C. Also from I-V characteristic we found that the quality factor decreases from 2.641 to 2.358 for same annealing temperature, this may be interpreted in term improvement of crystal structure with heat treatment. |
|
|
|
|
|
|
|
