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Structural Features and Electrical Properties of Ge1-xSnх Solid Solutions Grown on Ge, GaAs Substrates |
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PP: 125-129 |
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doi:10.18576/ijtfst/140208
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Author(s) |
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A. Sh. Razzokov,
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Abstract |
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| In this article single-crystal films of the Ge1-xSnх solid solution from a limited tin solution-melt in the temperature range of 893-723 K at a cooling rate of 0.5-1.5 K/min on an EPOS installation were grown epitaxial layers of Ge1-xSnx on Ge(111) and GaAs(100) substrates with carrier concentration n=(1÷5)·1017cm-3, n=(4÷7)·1017cm-3, respectively. The gap between the substrates was 0.65÷1.2 mm. Technological conditions have been achieved for obtaining a GaAs- Ge1-xSnx heterostructure with a smooth substrate-film boundary, with the supercooling temperature being T=6.2 °C. The single crystallinity of the Ge1-xSnх (0 ≤ х ≤0.03) film was determined by X-ray diffraction. The photosensitivity of the film covers the spectral region of 0.5-1.9 eV.
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