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Electrical Properties of Selenium Tellurium Chalcogenide Glass Doped with Antimony |
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PP: 1-10 |
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doi:10.18576/ijtfst/140101
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Author(s) |
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A. Z. Mahmoud,
Lamiaa Galal Amin,
Safwat A. Mahmoud,
Mnahil. M. Bashier,
Mohamed E. M. Eisa,
N. Dhahr,
Asma Mohamed,
Safwa Yagoub,
M. A. Abdel-Rahim,
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Abstract |
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| This present research employs a comprehensive study of the structural, optical, and electrical properties of Se85−xTe15Sbx glassy alloys, where x = 2.5,5,7.5,10, and 15 at.%. The synthesis of the glassy materials of Se85−xTe15Sbx is made through the conventional melt quenching method. Se85−xTe15Sbx thin films were then prepared on glass substrates, which were ultrasonically cleaned in acetone and then in distilled water, by thermal evaporation in the high vacuum of the order of 10−5 Torr. Regarding the as- deposited films of Se85−x Te15 Sbx (x = 2.5, 5, and 7.5%), the electrical conductivities (σ ) are determined for the temperature interval of 300-450 K. This work explores the relationship between composition and the density of localized state at the Fermi level (N(E f )) as well as the activation energy for conduction (∆ E ). Two types of conduction mechanisms are distinguished, each being governed by different channels. Thus, the increase with temperature of σ at (T > T g) as exponential is related to localized states in the tails of conduction bands. On the other hand, conduction at (T < T g) takes place by variable range hopping of charged carriers within localized near the Fermi level states. With the increase of the annealing temperature, both electrical conductivity and inversely proportional parameter (∆E) increase. The thesis also highlights the impact of annealing on other electrical properties of Se82.5Te15Sb2.5 films particularly where the films transform from the amorphous state to the crystalline phase.
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