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An In-Depth Analysis of Investigating and Simulating Thin Film Materials Using the Sputtering Process in Plasma Environments |
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PP: 119-124 |
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doi:10.18576/ijtfst/140207
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Author(s) |
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KOULALI Mostefa,
BOUAZZA Abdelkader,
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Abstract |
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| Sputtering takes place when ions strike a surface, leading to the ejection of atoms from that material. The yield of sputtering is affected by factors like the energy of the incoming ions and their angle of impact. In our initial study, we aim to quantify the sputtering yield of copper (Cu), silicon (Si), and indium oxide (In2O3) when bombarded by argon (Ar) and xenon (Xe) ions using SRIM software. We start by calculating the yield for normal incidence before exploring various angles of approach. The findings are then compared to analytical models, such as the Yamamura and Tawara model, to validate the SRIM results. This comparison confirms SRIMs effectiveness in predicting sputtering yield across different plasma conditions, establishing its dependability for future simulations of sputtering processes.
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