|
|
 |
| |
|
|
|
Optoelectronic characteristics for (Cu1−x Agx)2 ZnSnS4 films |
|
|
|
PP: 249-262 |
|
|
|
doi:10.18576/ijtfst/130309
|
|
|
|
Author(s) |
|
|
|
A. Ahmed Elshafie,
A. A. Showahy,
E. R. Shaaban,
|
|
|
|
Abstract |
|
|
| Thick films of (Cu1−x Agx)2 ZnSnS4 (CAZTS), with a thickness of 500 nm, were deposited using electron beam gun technology. This study explores how varying silver (Ag) content influences the properties of CAZTS films. Structural characteristics were investigated using X-ray diffraction (XRD). Film thickness and refractive index were determined from transmission spectra using Swanpoel’s method, and high-precision thickness measurements were further confirmed with spectral ellipsometry, employing three optical layer models. The absorption and extinction coefficients were calculated from transmittance and reflectance data in the strong absorption region, with bandgaps assessed accordingly. The bandgap decreased from 1.75 eV to 1.51 eV as Ag content increased, highlighting the probable of CAZTS films as absorber layers in solar cells. A Ni/n-CdS/p-CAZTS/Pt heterojunction was successfully fabricated, and its photovoltaic performance was estimated. By changing Ag content, the current-voltage characteristics of the heterojunctions were examined, suggesting that CAZTS thin films are promising candidates for solar cell absorber materials.
|
|
|
|
|
|
|
|
