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Investigating the Impact of Annealing and Thickness on the Optical and Electrical Characteristics of ZnO (TCO) for Optoelectronics Devices |
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PP: 139-149 |
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doi:10.18576/ijtfst/140210
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Author(s) |
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Shruti Bakshi,
Suman Rani,
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Abstract |
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| In this paper, we investigate Transparent Conducting Oxides (TCO) thin films, which have created immense interest in researchers due to their widespread utilization in optoelectronics devices. Annealing and thickness are two main characteristics of thin films that influence the optical and electrical properties of the ZnO thin films in terms of band gap energy. The goal of the study is to analyze the influence of annealing and thickness of thin films on the optical and electrical properties of zinc oxide thin films. The ZnO thin films were prepared with different layers, and annealing temperatures were at 300°C,400°C and 500°C. In XRD analysis, ZnO thin films exhibit a hexagonal crystal structure and reveal that crystallite size increases with the increase of annealing temperature. The transmission is strongly influenced by annealing temperature and thickness. At 500°C and thickness 189nm, 83% transmission is achieved in the visible region. The conductivity and activation energy of the ZnO thin film increases with the increase of annealing temperature and decreases with the increase of thickness. At 500°C and 189nm thickness, the value of conductivity and activation energy is 1.02 ×104(Scm-1) and Ea1=0.570eV, Ea2=0.865eV. The Figure of merit suggests that ZnO thin film will behave better at 500°C with 189nm among six deposition layers supporting its use as an affordable transparent conducting oxide thin film in optoelectronics devices.
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