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05- International Journal of Thin Film Science and Technology
An International Journal
               
 
 
 
 
 
 
 
 
 
 
 
 

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Volumes > Vol. 13 > No. 2

 
   

Study of the Dynamic Properties of Chaotic Circuits in the Presence of Memristors

PP: 153-168
doi:10.18576/ijtfst/130209
Author(s)
Zainab S. Kareem, Hussein B. Al Husseini,
Abstract
In this paper, the inaugural subject covered is a memristor model with three distinct circuits that is based on a multi-segment linear function. The dynamic behavior of these circuits is then examined in terms of bifurcations, coexisting attractors, and complexity based on various values of the inserted memristor parameters. Several dynamic features of these circuits, such as period-doubling bifurcations, chaotic bursts, and chaotic transients, are revealed via bifurcation analysis. Muthuswamy displays dynamic phenomena with varying beginning circumstances, such as coexisting attractors, multistability, and super multi-stability. Furthermore, circuit simulation was employed to confirm the Chua circuits existence and viability. The purpose of coexistence circuits is to produce attractors capable of altering any state variables initial value. The benefits of the suggested system, such as controlled attractor number and direction, an easy-to-implement circuit, and rich dynamic behavior, are demonstrated by comparison with other chaotic attractors. Finally, the coexistence of several chaotic attractors and the replacement of the exponential formula with a memristor formula increase the stability of the Colpitts circuit. Simulation results show that the three circuit schemes proposed in this article require less time to achieve full dynamics than other circuit schemes. This feature improves the effectiveness and usability of the proposed circuit strategy in practical applications.

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