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06- Advanced Engineering Technology and Application
An International Journal
               
 
 
 
 
 
 
 
 
 
 
 
 
 
 

Content
 

Volumes > Vol. 12 > No. 01

 
   

Effect of Ion Implantation Temperature on Formation of Nanometric β-FeSi2 Layer

PP: 15-19
Author(s)
AYACHE Rachid,
Abstract
A nanometric buried layer of iron disilicide was synthesized by ion implantation in Si(1 1 1) p-type at different temperatures using 195 keV Fe ions with a dose of 2.1017 Fe+ /cm2 . The investigation of the phase composition is carried out by Rutherford backscattering spectrometry (RBS), whereas the structural characterization is obtained by X-ray diffraction (XRD) pole figure. The process of the silicidation has been investigated at a function of the ion implantation temperatures ranging from 200 to 440 °C. The precipitates favor epitaxial growth with respect to Si(1 1 1) planes with epitaxial relationships -FeSi2(2 2 0) //Si(1 1 1) and/or -FeSi2 (2 0 2) // Si(1 1 1).

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