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Investigation of the Surface Structure of Si, Ge, GaAs, GaP by the Method of Ion Bombarding When Growing Solid Solutions from a Liquid Phase |
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PP: 201-205 |
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doi:10.18576/ijtfst/120305
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Author(s) |
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A. S. Razzokov,
A. S. Saidov,
U. O. Kutliev,
M. K. Karimov,
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Abstract |
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| The article presents the results of simulation with the method of ion bombardment of the surface of Si, Ge, GaAs, GaP. Theoretically, the impact parameters p(Å) of surface components are determined when exposed to Ar+, Ne+, Xe+ ions with an initial energy of 1 keV, at scattering angles in the range from 00С
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