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Influence of Effective Surface Area on Gas Sensing Properties and Surface Morphology of Ag Doped Cu2O Thin Films by Cost Effective Method of M-SILAR Technique |
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PP: 181-189 |
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doi:10.18576/ijtfst/120304
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Author(s) |
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A. Vasuhi,
K. Dhanabalan,
A. T. Ravichandran,
R. Chandramohan,
K. Ravichandran,
R. Shalini,
Srinivas Mantha,
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Abstract |
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| Undoped and silver (Ag) doped Cu2O (Cu2-xAgxO; x= 2.5, 5.0, 7.5 and 10.0 mol. %) thin films were deposited onto glass substrate using modified successive ionic layer adsorption and reaction (M-SILAR) technique. The Ag doping level causes significant influence on the properties of the system prepared. The results indicated that 10.0 mol.% Ag doping causes major property improvements. The deposited films were characterized by their structural, morphological, surface smoothness, optical and gas sensitivity. The X-ray diffraction analysis shows the polycrystalline growth of Cu2-xAgxO films. The substitution by Ag2+ ions result in cubic structure (111) preferential orientation. The transmittance and optical band-gap values are maximum (≈2.12 to 1.73eV) for the Ag doping level of 10.0 mol.%. The Fourier transform infrared (FTIR) results confirmed the stretching vibrations of Cu-O and Ag-O. The Gas sensitivity revealed, Ag doped Cu2O serve as sensor material for the detection of NH3 molecules at room temperature compared to undoped film. The gas sensing test was performed by the resistance measurement of the system using a Keithley System. |
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