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Characterization of Indium Doped Tin Disulphide Thin Films using Modified Spray Pyrolysis Technique |
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PP: 13-19 |
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doi:10.18576/ijtfst/120103
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Author(s) |
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G. Anbazhagan,
L.Amalraj,
K. Vijayakumar,
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Abstract |
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| Precursor solutions of tin tetrachloride monohydrate (0.1 M), n-n dimethyl thiourea (0.05 M, 0.1 M and 0.2 M) were used to prepare Tin disulphide (SnS2) thin films had been deposited onto glass substrates at different molar concentration at the substrate temperature 573 K using modified spray pyrolysis technique. At the molar concentration ratio 1:2, the physical properties were studied for undoped and Indium doped tin disulphide thin films. Using hot probe technique, the films are found to be n type electrical conduction. X ray diffraction analysis revealed single phase tin disulphide thin film with higher intensity and belongs to hexagonal structure and the polycrystalline nature of a preferential orientation along (002) plane. The crystallites sizes were determined using the Full Width at Half Maximum values of Bragg peaks. SEM micrographs had shown that morphologies of the films changed with Indium doping. The optical absorption and transmittance spectra have been recorded for as prepared films in the visible wavelength range in nanometer. From the analysis of the absorption region data, direct and direct forbidden optical transition nature was determined for the films in the above wavelength range. FTIR study had been carried out for the bond evaluation. |
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