|
|
 |
| |
|
|
|
Study of the Effects of Annealing Temperature on the Properties of ZnO Thin Films Grown by Spray Pyrolysis Technique for Photovoltaic Applications |
|
|
|
PP: 19-28 |
|
|
|
doi:10.18576/ijtfst/110103
|
|
|
|
Author(s) |
|
|
|
K. Salim,
M. N. Amroun,
|
|
|
|
Abstract |
|
|
| Zinc oxide (ZnO) thin films deposited on glass substrates at 300 °C by spray pyrolysis technique and then annealed at different temperatures ranging from 300 to 400 °C for 1 hour in air. The effects of the annealing temperature on the structural, optical and electrical properties of the ZnO thin films were studied. X-ray diffraction suggests that a hexagonal wurtzite structure with a strong (002) preferred orientation and the crystallite size increases with annealing temperature. The optical transmittance spectra showed transmittance higher about 82% in Vis and IR region of the annealed films at 375 °C. The direct optical band gap rises from 3.17 eV to 3.27 eV for as-deposited and annealed ZnO thin film at 375 °C, respectively. The resistivity values of the samples have changed from 6.27.10+2 to 7.50.10+1 (Ω.cm) with annealing temperature.
|
|
|
|
|
|
|
|
