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Characterization of Cobalt Selenide Films using FESEM and EDX |
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PP: 1-9 |
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doi:10.18576/ijtfst/110101
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Author(s) |
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Ho Soonmin,
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Abstract |
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| Preparation of thin films via chemical and physical deposition technique had been reported by many researchers. The obtained films were characterized by using various tools. Thin films were used in different applications including solar cell, light emitting diode, capacitor, photo detector, ultra violet opto-electronics, and photonic integrated circuit. In this work, the successive ionic layer adsorption and reaction (SILAR) method was used because of low temperature deposition, the simplest and the cheapest deposition method. This is the first time, composition of thin films (under various deposition cycles) was studied using energy dispersive x-ray analysis (EDX). EDX results confirmed that the atomic percentage of cobalt and selenide strongly depended on the number of deposition cycle in the experiment. Larger grain size could be observed for the thin films deposited for 20 cycles based on the field emission scanning electron microscopy analysis. |
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