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Sputtering of semiconductors, conductors, and dielectrics for the realization of electronics components thin-films |
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PP: 225-232 |
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doi:10.18576/ijtfst/110210
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Author(s) |
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Abdelkader BOUAZZA,
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Abstract |
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| With the application of Monte Carlo simulation codes represented by SRIM (Stopping and Range of Ion in Matter) and SIMTRA (Simulation of the Metal Transport) software, the effect of diver’s parameters on the surface structure of thin films are studied in 3D form with the magnetron sputtering process. Inside a vacuum chamber, 105 particles of various gas which are Argon (Ar), Xenon (Xe), and Neon (Ne) are injected, the target contained materials used for the manufacturing of electronic components like semiconductors: Silicon (Si) and Germanium (Ge), conductors: Copper (Cu) and dielectric: silicon dioxide (SiO2) materials respectively. The results obtained in this work show that the energies of the particles, the incidence angles, and the gas nature are some of the principles and important parameters which affect the sputtering yield and hence the number of ejected atoms from the target, increasing the energy or incidence angles will increase the total number of ejected atoms, using Xenon gas gives best results comparing to Argon and Neon and also the sputtering yield of the copper conductor is superior to semiconductors and dielectric materials each to each.
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