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Influence of Doping Concentration on the Properties of Tin Doped Zinc Oxide Thin Films Prepared by Spray Pyrolysis for Photovoltaic Applications |
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PP: 197-204 |
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doi:10.18576/ijtfst/100309
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Author(s) |
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K. Salim,
M. N. Amroun,
W. Azzaoui,
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Abstract |
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| This work reports on the preparation and characterization of zinc oxide (ZnO) thin films by spray pyrolysis on glass substrates. The effect of Sn doping with 1% Sn (TZO-1.00), 1.5% Sn (TZO-1.50), 2% Sn (TZO-2.00) on the structural, optical and electrical properties of the obtained films was studied. The obtained films are characterized by different techniques such as X-ray diffraction (XRD), UV-visible and electrical Hall Effect measurements. The results of the XRD characterization indicate that all the films have the polycrystalline hexagonal wurtzite structure with a preferred orientation (002). Spectroscopic measurements in the UV-VIS-IR wavelength range were found to give good average transmittance values of about 70%, with a high transmittance of 75% with 1.5% Sn doping. The optical gap value increases in the range of 3.23 to 3.29 eV with increasing tin content. The electrical analysis shows that the conductivity improves slightly with doping compared to the pure ZnO film. |
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