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Synthesis and Characterization of Copper Zinc Sulfide (Cu_x Zn_(1-x)S) Ternary Thin Film by Using Acidic Chemical Bath Deposition Method |
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PP: 21-27 |
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doi:10.18576/ijtfst/100104
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Author(s) |
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Derejaw Gardew Dubale,
Tizazu Abza Abshiro,
Fekadu Gashaw Hone,
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Abstract |
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| In this work, copper zinc sulfide (Cu_x Zn_(1-x)S) ternary thin films with parameter "x" such
that 0 ≤ x ≤ 0:13 were successfully deposited on glass substrate by acidic chemical baths
using EDTA as a complexing agent, zinc acetate and copper acetate as a source of 〖Zn〗^(2+) and 〖Cu〗^(2+) respectively and thioacetamide as source of S^(2-). ZnS was deposited as a pure
binary thin film. The band gap of ZnS thin film was increased from 3.8 eV to 4.05 eV for
4.7% Cu added to zinc sulfide. ZnS and Cu_x Zn_(1-x)S thin films were characterized by X-Ray
Diffraction (XRD), Scanning Electron Microscopy (SEM), Energy Dispersive X-ray (EDX)
and Optical Absorption Spectroscopy (UV-Vis). The effects of deposition concentrations
of copper on the optical property of the CuZnS thin films were observed. The XRD studies
revealed that pure zinc sulfide thin film cubic structure and all the CuZnS samples were
crystallized in amorphous structure. The SEM studies determined the films grain size as
spherical shape and the atoms in the film were networked to each other. When copper
acetate was added to zinc acetate, they formed a solid solution after a long time by acidic
chemical bath deposition. The band gap of pure ZnS thin film was 3.8 eV at deposition
time of 1:30 hr with a pH of 3.5 and at deposition temperature of 75 75℃. The optical
energy band gap of copper zinc sulfide was conducted at 2.1 eV by the above deposition
condition. The films were adherent, transparent and uniform.
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