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Effect of Different Silar Cycle on Chemically Deposited ZINC Copper Sulphide (ZnCuS) |
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PP: 117-120 |
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doi:10.18576/ijtfst/100208
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Author(s) |
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Kola Odunaike,
Q. A. Adeniji,
A. L. Sheu,
T. O. Fowodu,
T. A. Alabi,
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Abstract |
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| Ternary thin films of ZnCuS were grown on soda lime glass (SLG) substrate by Successive Ionic Layer Adsorption and Reaction (SILAR) technique at room temperature with one molar concentration of zinc (Zn) ions (1 M) at varying SILAR cycles (20 and 30 cycles) of deposition. Zinc chloride, copper (II) chloride dihydrate (cuprous chloride) and thiourea serves as precursors for zinc, copper and sulphur ions respectively with EDTA, TEA and NH4OH as complexing agents. The thin films grown were characterized using Avantes UV-VIS spectrophotometer (in wavelength range of 200 nm – 1000 nm) and Four Point Probe machine. The results suggest that the reflectance, transmittance and absorbance of the films show appreciable change for varying the SILAR cycles. The optical properties showed that the thin films have high reflectance (with a peak value of 30%) in the UV-region and low reflectance in the VIS-NIR-regions. The transmittance was 80% around 500 nm wavelengths. However, it was observed that the energy band gap decreased as the SILAR cycle increases (range from 3.87 eV and 3.58 eV). In addition, it was also observed that the grown thin films exhibited high absorbance (between 2.5 and 3.4) in the UV region of the electromagnetic spectrum between wavelength of 200 nm to 300 nm which show a decrease with increase in wavelength of solar radiation and the films showed relatively low absorbance in the VIS-NIR region of the spectrum. The electrical result of the thin films shows that resistivity decreases while conductivity increases as the SILAR cycle increases.
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