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Analog and RF Performance Analysis of 22nm Modified Source/Drain Dual Gate FDSOI MOSFET |
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PP: 185-192 |
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doi:10.18576/ijtfst/090305
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Author(s) |
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Abhishek Kumar Malviya,
Himanshu Yadav,
R. K. Chauhan,
Anshika Srivastava,
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Abstract |
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| In this paper, 22nm FDSOI MOSFET having Modified Source/Drain with Dual Gate has been analyzed. This device, not only provides higher ON current but it has also a lower leakage current in order of pA. With the help of Dual Gate (DG) electrical characteristics and Short Channel Effects improved. Analysis parameters like Drain Induced Barrier Lowering (DIBL), Subthreshold Swing, Threshold roll-off, Carrier Concentration, Gate to drain Capacitance, Gate to Source Capacitance, cut-off frequency, Conduction and Valence Band Banding are analyzed using high-k spacers. |
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