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On Optimization of Manufacturing of A High-Voltage Current Driver Based on Hetero Structures to Increase Density of Their Elements. Influence of Miss-Match Induced Stress and Porosity of Materials on Technological Process |
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PP: 73-94 |
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doi:10.18576/ijtfst/070204
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Author(s) |
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E. L. Pankratov,
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Abstract |
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| In this paper we introduce an approach to increase density of field-effect transistors and diodes framework a high-voltage current driver. Framework the approach we consider manufacturing the driver in hetero structure with specific configuration. Several required areas of the hetero structure should be doped by diffusion or ion implantation. After that do pant and radiation defects should by annealed framework optimized scheme. We also consider an approach to decrease value of mismatch-induced stress in the considered hetero structure. We introduce an analytical approach to analyze mass and heat transport in hetero structures during manufacturing of integrated circuits with account mismatch-induced stress. |
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