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Preparation and Characterization of a-Si:H and a-SiC:H Separate p-i-n Thin Films |
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PP: 117-121 |
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doi:10.18576/ijtfst/060304
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Author(s) |
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Ahmed Abo Arais,
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Abstract |
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| a-Si:H and a-SiC:H in undoped, buffer, p-type and n-type thin films were deposited by radio frequency (RF) glow discharge decomposition method on Croning 7059 glass substrates from silane gas (SiH4) mixed with methane (CH4) for undoped, buffer and B2H6, PH3 were added for p-type and n-type thin films respectively. Gap state defects of a-Si:H and a-SiC:H thin films for both undoped and doped types have been investigated by constant photocurrent method (CPM). The minimum defect density of a-Si:H, i-film was found to be 2.5x1016cm-3 and for undoped a-SiC:H, buffer-layer was evaluated to be 8.8x1016cm-3. There was a gradual increase in defect density by alloying with carbon and also by doping p-type and n-type. The adding of carbon was widen the energy gap (Eg) and increased the Urbach energy tail (Eo). The low defect density layers were identified to be applied in p-i-n solar cells with expected high quality. The results were discussed according to weak bond-dangling bond conversion model and defect pool model. |
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