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Brush Plated Copper Gallium Sulphide Films and their Properties |
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PP: 77-81 |
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doi:10.18576/ijtfst/060205
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Author(s) |
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B. Kajamaideen,
A. Panneerselvam,
K. R. Murali,
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Abstract |
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| Copper gallium sulphide films were deposited for the first time by the brush plating technique at different electrolyte temperatures in the range of 30°C - 80°C and at a constant deposition current density of 5.0 mA cm-2. X-ray diffractograms of the films are single phase with chalcopyrite structure. EDAX measurements indicated that the Cu/Ga ratio decreased from 1.29 to 1.00 as the electrolyte temperature increased from 30°C - 80°C. The grain size increased with increase of electrolyte temperature. The grain size increases from 100 nm to 300 nm as the electrolyte temperature increases. |
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