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Structural Characterizations and the Influence of Metal Work Function Contact for Nanocrystalline2,9-Dimethyl-4,7-Diphenyl-1,10-Phenanthroline Based Devices |
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PP: 29-35 |
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Author(s) |
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A. M. Mansour,
A. A. M. Farag,
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Abstract |
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| Nanocrystalline 2,9-Dimethyl-4,7-diphenyl-1,10-phenanthroline, BCP thin films were successfully deposited by dip-coating technique. Surface morphology and film thickness of the obtained films were achieved from the front and cross sectional imaging of scanning electron microscopy. The influence of several rectifying metals such as Al, In, Sn and Au on the current-voltage characteristics of BCP based devices was investigated at metal/semiconductor. Electrical parameters of the devices were extracted from the forward current-voltage characteristics and compared with each other. The relationship of barrier height and the metal work function were found to vary almost linearly due to the pinning of Fermi-level in the lowest unoccupied molecular orbital of BCP. Moreover, the prepared devices of Al, In, Sn, and Au/ BCP show different rectifying characteristics. High value of rectification characteristics of Au/ BCP can be interpreted by means of high value of work function of Au metal as compared with the other metals at M/S interface. In addition, analyses of current-voltage characteristics confirm that using of different metals (Al, In, Sn, and Au) have considerable influence on electrical characteristics of the prepared devices. The transient of the photocurrent of the prepared devices suggests the validity of these devices for optoelectronic application due the sensitivity for the white incident light. |
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